Invention Grant
- Patent Title: Power reduction in thyristor random access memory
- Patent Title (中): 晶闸管随机存取存储器功耗降低
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Application No.: US14841615Application Date: 2015-08-31
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Publication No.: US09496021B2Publication Date: 2016-11-15
- Inventor: Harry Luan , Bruce L. Bateman , Valery Axelrad , Charlie Cheng
- Applicant: Kilopass Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Kilopass Technology, Inc.
- Current Assignee: Kilopass Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Aka Chan LLP
- Main IPC: G11C11/39
- IPC: G11C11/39 ; G11C15/04 ; G06F11/14 ; G11C11/411
Abstract:
Memory cells are formed with vertical thyristors to create a volatile memory array. Power consumption in such arrays is reduced or controlled with various techniques including encoding the data stored in the arrays.
Public/Granted literature
- US20160093358A1 Power Reduction in Thyristor Random Access Memory Public/Granted day:2016-03-31
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