发明授权
- 专利标题: Inspection method for lithography
- 专利标题(中): 光刻检验方法
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申请号: US13060390申请日: 2009-09-08
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公开(公告)号: US09494872B2公开(公告)日: 2016-11-15
- 发明人: Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
- 申请人: Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 国际申请: PCT/EP2009/006518 WO 20090908
- 国际公布: WO2010/031510 WO 20100325
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.
公开/授权文献
- US20110229830A1 Inspection Method For Lithography 公开/授权日:2011-09-22
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