发明授权
- 专利标题: Multi-aperture extraction system for angled ion beam
- 专利标题(中): 用于倾斜离子束的多孔径提取系统
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申请号: US15070880申请日: 2016-03-15
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公开(公告)号: US09478399B2公开(公告)日: 2016-10-25
- 发明人: Alexandre Likhanskii , Svetlana B. Radovanov , William Davis Lee
- 申请人: Varian Semiconductor Equipment Associates, Inc.
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01J7/24
- IPC分类号: H01J7/24 ; H01J37/32
摘要:
An apparatus for creating an angled ion beam for implanting into a substrate is disclosed. The apparatus includes a plasma chamber in which plasma is created. The extraction aperture includes a plurality of rotatable plates. Ion beamlets are extracted through apertures defined by the plurality of rotatable plates. The degree to which these plates are rotated determines the angle of extraction for the extracted ion beam. These plates may be formed in a plurality of different shapes, which may increase the maximum extraction angle that is achievable. Additionally, electrodes may be disposed near the plates to affect the extraction angle.
公开/授权文献
- US20160284520A1 MULTI-APERTURE EXTRACTION SYSTEM FOR ANGLED ION BEAM 公开/授权日:2016-09-29
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