发明授权
US09477040B1 Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof
有权
引导波长光电二极管使用通过吸收器量子阱混合及其方法
- 专利标题: Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof
- 专利标题(中): 引导波长光电二极管使用通过吸收器量子阱混合及其方法
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申请号: US14801257申请日: 2015-07-16
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公开(公告)号: US09477040B1公开(公告)日: 2016-10-25
- 发明人: Erik J. Skogen
- 申请人: Sandia Corporation
- 申请人地址: US NM Albuquerque
- 专利权人: Sandia Corporation
- 当前专利权人: Sandia Corporation
- 当前专利权人地址: US NM Albuquerque
- 代理商 Aman Talwar
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232 ; G02B6/132 ; H01L31/18 ; H01L31/0352 ; G02B6/134 ; G02B6/12
摘要:
The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.
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