发明授权
- 专利标题: Method of manufacturing display apparatus using etching buffer layer
- 专利标题(中): 使用蚀刻缓冲层制造显示装置的方法
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申请号: US14455812申请日: 2014-08-08
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公开(公告)号: US09472583B2公开(公告)日: 2016-10-18
- 发明人: Seok Il Kwon , Deuk Jong Kim
- 申请人: Samsung Display Co., Ltd.
- 申请人地址: KR Yongin-si
- 专利权人: Samsung Display Co., Ltd.
- 当前专利权人: Samsung Display Co., Ltd.
- 当前专利权人地址: KR Yongin-si
- 代理机构: Lewis Roca Rothgerber Christie LLP
- 优先权: KR10-2013-0146154 20131128
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L21/02 ; H01L21/311 ; H01L21/3213
摘要:
A method of manufacturing a display device including providing a substrate, forming a semiconductor layer on the substrate, forming a first insulating layer on the semiconductor layer, forming a metal layer on the first insulating layer, forming a second insulating layer on the metal layer, forming an etching buffer layer on the second insulating layer, forming a photosensitive film pattern on the etching buffer layer, and etching the etching buffer layer and the first and second insulating layers to expose the semiconductor layer.
公开/授权文献
- US20150147837A1 METHOD OF MANUFACTURING DISPLAY APPARATUS 公开/授权日:2015-05-28
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