发明授权
- 专利标题: Dual mode latch circuit
- 专利标题(中): 双模式锁存电路
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申请号: US14858494申请日: 2015-09-18
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公开(公告)号: US09461633B1公开(公告)日: 2016-10-04
- 发明人: Navid Foroudi
- 申请人: Navid Foroudi
- 申请人地址: US CA Santa Clara
- 专利权人: INPHI CORPORATION
- 当前专利权人: INPHI CORPORATION
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H03M9/00
- IPC分类号: H03M9/00 ; H03K3/356
摘要:
A latch circuit that has a dynamic mode and a static mode is provided. Clock signals are generated specifically for a feedback path of a storage circuit in the latch circuit. The generated clock signals include transitions that cause clocked NMOS and PMOS devices in the feedback path to function, and for other input clock frequencies, the generated clock signals do not include transitions that cause the clocked PMOS and NMOS devices to be active, and have states that cause clocked PMOS and NMOS devices to be inactive.
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