Invention Grant
- Patent Title: Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, and display device
- Patent Title (中): 薄膜晶体管及其制造方法,阵列基板及其制造方法以及显示装置
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Application No.: US14376028Application Date: 2013-11-27
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Publication No.: US09455324B2Publication Date: 2016-09-27
- Inventor: Zhanfeng Cao , Qi Yao , Luke Ding , Bing Sun , Xiangchun Kong
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg
- Priority: CN201310385416 20130829
- International Application: PCT/CN2013/087941 WO 20131127
- International Announcement: WO2015/027588 WO 20150305
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/12 ; H01L29/51 ; G02F1/1368 ; H01L29/49 ; H01L29/786

Abstract:
The present invention provides a thin film transistor and a method of fabricating the thin film transistor, an array substrate and a method of fabricating the array substrate, and a display device. The thin film transistor includes a substrate and a gate, an insulation layer, an active layer, a source and a drain which are provided on the substrate. A spacer layer is also provided between the gate and the active layer, and the spacer layer overlaps at least with one of the gate and the active layer having a smaller area in an orthographic projection direction. The spacer layer can effectively prevent material forming the gate from being diffused into the active layer, thereby ensuring stability of performance of the thin film transistor. In the array substrate utilizing the thin film transistor, the spacer layer further extends to a region corresponding to a gate line.
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