发明授权
- 专利标题： Method of manufacturing semiconductor device and semiconductor device
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US14138164申请日： 2013-12-23
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公开(公告)号： US09455240B2公开(公告)日： 2016-09-27
- 发明人: Jumpei Konno , Takafumi Nishita , Nobuhiro Kinoshita , Kazunori Hasegawa , Michiaki Sugiyama
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Shapiro, Gabor and Rosenberger, PLLC
- 优先权： JP2012-286078 20121227
- 主分类号： H01L23/488
- IPC分类号： H01L23/488 ; H01L23/00 ; H01L23/498 ; H01L21/56
摘要：
Reliability of a semiconductor device is improved. Each of a plurality of terminals formed on a chip mounting surface included in a wiring substrate has a shape in which a narrow width portion is arranged between adjacent wide width portions in plan view. Moreover, a center of a tip end surface of each of a plurality of protruding electrodes formed on a semiconductor chip mounted on the wiring substrate is arranged at a position where it overlaps the narrow width portion in plan view, and the plurality of terminals and the plurality of protruding electrodes are electrically connected to each other via a solder member.
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