发明授权
- 专利标题： Semiconductor device and formation thereof
- 专利标题（中）： 半导体器件及其形成
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申请号： US15130032申请日： 2016-04-15
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公开(公告)号： US09449886B2公开(公告)日： 2016-09-20
- 发明人: I-Wen Wu , Hsien-Cheng Wang , Hsin-Ying Lin , Mei-Yun Wang , Hsiao-Chiu Hsu , Shih-Wen Liu
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Cooper Legal Group, LLC
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/762 ; H01L21/8234
摘要：
A semiconductor device and method of formation are provided herein. A semiconductor device includes a first active region adjacent a first side of a shallow trench isolation (STI) region. The first active region including a first proximal fin having a first proximal fin height adjacent the STI region, and a first distal fin having a first distal fin height adjacent the first proximal fin, the first proximal fin height less than the first distal fin height. The STI region includes oxide, the oxide having an oxide volume, where the oxide volume is inversely proportional to the first proximal fin height. A method of formation includes forming a first proximal fin with a first proximal fin height less than a first distal fin height of a first distal fin, such that the first proximal fin is situated between the first distal fin and an STI region.
公开/授权文献
- US20160233131A1 SEMICONDUCTOR DEVICE AND FORMATION THEREOF 公开/授权日：2016-08-11
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