Invention Grant
- Patent Title: Compliant dielectric layer for semiconductor device
- Patent Title (中): 适用于半导体器件的电介质层
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Application No.: US14147237Application Date: 2014-01-03
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Publication No.: US09431370B2Publication Date: 2016-08-30
- Inventor: Rezaur Rahman Khan , Sam Ziqun Zhao
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/768 ; H01L23/528 ; H01L23/498 ; H01L21/48 ; H01L23/48

Abstract:
Systems, apparatuses, and methods provided for semiconductor devices and integrated circuit (IC) packages that include compliant dielectric layers. In a through silicon via interposer or substrate, a compliant dielectric material may be added to a surface of silicon material body to form a compliant dielectric layer. The compliant dielectric layer provides a thermal buffer and a stress buffer for a resulting IC package. The compliant dielectric material may be selected such that the coefficient of thermal expansion of the compliant dielectric material approximately matches the coefficient of thermal expansion of the circuit board on which the IC package is mounted. The compliant dielectric material may be selected such that it has a deformability that is greater than the silicon material body. Multiple sub-layers of compliant dielectric material may be used.
Public/Granted literature
- US09219054B2 Compliant dielectric layer for semiconductor device Public/Granted day:2015-12-22
Information query
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