Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13862381Application Date: 2013-04-13
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Publication No.: US09425088B2Publication Date: 2016-08-23
- Inventor: Takumi Ihara , Seiji Ueno , Joji Fujimori , Yasunori Fujimoto
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-279284 20101215
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L23/552 ; H01L25/16 ; H01L23/36 ; H01L23/367 ; H01L23/42 ; H01L25/065
Abstract:
A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor.
Public/Granted literature
- US20130224912A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2013-08-29
Information query
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