Invention Grant
- Patent Title: Method for producing silicon wafer
- Patent Title (中): 硅晶片的制造方法
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Application No.: US13983964Application Date: 2012-02-09
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Publication No.: US09425056B2Publication Date: 2016-08-23
- Inventor: Takuya Sasaki , Hiromasa Hashimoto , Kazuya Sato , Ayumu Sato
- Applicant: Takuya Sasaki , Hiromasa Hashimoto , Kazuya Sato , Ayumu Sato
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-048852 20110307
- International Application: PCT/JP2012/000856 WO 20120209
- International Announcement: WO2012/120785 WO 20120913
- Main IPC: H01L21/302
- IPC: H01L21/302 ; B24B1/00 ; B24B37/08 ; H01L21/304 ; B24B37/24 ; H01L21/02
Abstract:
The present invention provides a method for producing a silicon wafer including a step of, after growing the oxide film on one surface of a raw material silicon wafer by chemical-vapor deposition, performing double-side polishing of the raw material silicon wafer in such a manner that a suede polishing pad or a velour polishing pad with an asker-C rubber hardness of 50° or more but less than 90° is used for the oxide-film surface.
Public/Granted literature
- US20130316521A1 METHOD FOR PRODUCING SILICON WAFER Public/Granted day:2013-11-28
Information query
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