Invention Grant
- Patent Title: Die edge seal employing low-K dielectric material
- Patent Title (中): 使用低K电介质材料的密封边缘密封
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Application No.: US14555558Application Date: 2014-11-26
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Publication No.: US09406625B2Publication Date: 2016-08-02
- Inventor: Zhijie Wang , Zhigang Bai , Jiyong Niu , Dehong Ye , Huchang Zhang
- Applicant: Zhijie Wang , Zhigang Bai , Jiyong Niu , Dehong Ye , Huchang Zhang
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDCUTOR, INC.
- Current Assignee: FREESCALE SEMICONDCUTOR, INC.
- Current Assignee Address: US TX Austin
- Agent Charles E. Bergere
- Priority: CN201410274241 20140619
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L27/118 ; H01L41/338 ; H01L23/00 ; H01L23/58 ; H01L21/78 ; H01L21/66

Abstract:
A semiconductor wafer has a multi-stage structure that damps and contains nascent cracks generated during dicing and inhibits moisture penetration into the active region of a die. The wafer includes an array of die regions separated by scribe lanes. The die regions include an active region and a first ring that surrounds the active region. A portion of the first ring includes a low-k dielectric material. A second ring includes a stack of alternating layers of metal and interlayer dielectric (ILD) material. A dummy metal region around the rings includes a stacked dummy metal features and surrounds the active region. A regular or irregular staggered arrangement of saw grid process control (SGPC) features reduces mechanical stress during dicing.
Public/Granted literature
- US20150371957A1 DIE EDGE SEAL EMPLOYING LOW-K DIELECTRIC MATERIAL Public/Granted day:2015-12-24
Information query
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