发明授权
- 专利标题： Copper wiring forming method with Ru liner and Cu alloy fill
- 专利标题（中）： 铜线路成型方法用Ru衬里和Cu合金填充
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申请号： US14316251申请日： 2014-06-26
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公开(公告)号： US09406557B2公开(公告)日： 2016-08-02
- 发明人: Osamu Yokoyama , Cheonsoo Han , Takashi Sakuma , Chiaki Yasumuro , Tatsuo Hirasawa , Tadahiro Ishizaka , Kenji Suzuki
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权： JP2013-136366 20130628
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/532 ; H01L21/288
摘要：
Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.
公开/授权文献
- US20150004784A1 Copper Wiring Forming Method 公开/授权日：2015-01-01
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