发明授权
US09406540B2 Self-bias calculation on a substrate in a process chamber with bias power for single or multiple frequencies
有权
在具有偏置功率的单个或多个频率的处理室中的衬底上的自偏置计算
- 专利标题： Self-bias calculation on a substrate in a process chamber with bias power for single or multiple frequencies
- 专利标题（中）： 在具有偏置功率的单个或多个频率的处理室中的衬底上的自偏置计算
-
申请号： US13647624申请日： 2012-10-09
-
公开(公告)号： US09406540B2公开(公告)日： 2016-08-02
- 发明人: Gary Leray , Valentin Nikolov Todorow , Samer Banna
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Moser Taboada
- 代理商 Alan Taboada
- 主分类号： H01L21/683
- IPC分类号： H01L21/683 ; G01R27/16 ; G06F19/00
摘要：
Methods for calculating a self-bias on a substrate in a process chamber may include measuring a DC potential of a substrate disposed on a substrate support of a process chamber while providing a bias power from a power source to a cathode at a first frequency; measuring a voltage, current and phase shift at a matching network coupled to the power source while providing the bias power; calculating an effective impedance of the cathode by determining a linear relationship between a calculated voltage and the measured DC potential of the substrate; calculating a first linear coefficient and a second linear coefficient of the linear relationship between the calculated voltage and the measured DC potential of the substrate; and calculating a self bias on the substrate by utilizing the first linear coefficient, second linear coefficient, measured DC potential of the substrate, effective impedance, and measured phase shift.
公开/授权文献
信息查询
IPC分类:
