Invention Grant
- Patent Title: Pinned target design for RF capacitive coupled plasma
- Patent Title (中): RF电容耦合等离子体的固定目标设计
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Application No.: US13799014Application Date: 2013-03-13
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Publication No.: US09404174B2Publication Date: 2016-08-02
- Inventor: Donny Young , Alan A. Ritchie
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34

Abstract:
In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.
Public/Granted literature
- US20130186751A1 PINNED TARGET DESIGN FOR RF CAPACITIVE COUPLED PLASMA Public/Granted day:2013-07-25
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