Invention Grant
- Patent Title: Memory device refresh commands on the fly
- Patent Title (中): 内存设备刷新命令
-
Application No.: US14271124Application Date: 2014-05-06
-
Publication No.: US09396785B2Publication Date: 2016-07-19
- Inventor: Kuljit S. Bains
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G11C11/406
- IPC: G11C11/406

Abstract:
On the fly switching from one memory device refresh rate to another is provided. Control logic associated with the memory device detects a condition to switch from a currently-applied refresh rate to a different refresh rate. In response to the condition, the refresh rate is dynamically switched. The switching does not require a change of a mode register. Thus, a refresh rate for the memory device can be dynamically changed on the fly.
Public/Granted literature
- US20140241094A1 MEMORY DEVICE REFRESH COMMANDS ON THE FLY Public/Granted day:2014-08-28
Information query