发明授权
- 专利标题： Embedded capacitor
- 专利标题（中）： 嵌入式电容器
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申请号： US14471546申请日： 2014-08-28
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公开(公告)号： US09391156B2公开(公告)日： 2016-07-12
- 发明人: Hans-Peter Moll , Peter Baars , Jan Hoentschel
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L49/02
- IPC分类号： H01L49/02 ; H01L21/28 ; H01L29/49 ; H01L27/06 ; H01L23/522
摘要：
A method of manufacturing a semiconductor device is provided, including forming a gate electrode of a dummy transistor device on a semiconductor substrate, forming a high-k material layer over and adjacent to the gate electrode and forming a metal layer on the high-k material layer over and adjacent to the gate electrode to form a capacitor.
公开/授权文献
- US20160064471A1 EMBEDDED CAPACITOR 公开/授权日：2016-03-03
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