发明授权
- 专利标题： Normally-off gallium nitride-based semiconductor devices
- 专利标题（中）： 通常的氮化镓基半导体器件
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申请号： US14319490申请日： 2014-06-30
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公开(公告)号： US09385199B2公开(公告)日： 2016-07-05
- 发明人: Jamal Ramdani
- 申请人： National Semiconductor Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： US CA Santa Clara
- 代理商 Jacqueline J. Garner; Frank D. Cimino
- 主分类号： H01L31/0336
- IPC分类号： H01L31/0336 ; H01L29/225 ; H01L29/66 ; H01L29/778 ; H01L29/20
摘要：
A method includes forming a relaxed layer in a semiconductor device. The method also includes forming a tensile layer over the relaxed layer, where the tensile layer has tensile stress. The method further includes forming a compressive layer over the relaxed layer, where the compressive layer has compressive stress. The compressive layer has a piezoelectric polarization that is approximately equal to or greater than a spontaneous polarization in the relaxed, tensile, and compressive layers. The piezoelectric polarization in the compressive layer could be in an opposite direction than the spontaneous polarization in the compressive layer. The relaxed layer could include gallium nitride, the tensile layer could include aluminum gallium nitride, and the compressive layer could include aluminum indium gallium nitride.
公开/授权文献
- US20140312358A1 NORMALLY-OFF GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICES 公开/授权日：2014-10-23
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