发明授权
US09385132B2 Arrays of recessed access devices, methods of forming recessed access gate constructions, and methods of forming isolation gate constructions in the fabrication of recessed access devices
有权
嵌入式接入装置的阵列，形成凹入的接入门结构的方法以及在凹陷接入装置的制造中形成隔离栅极结构的方法
- 专利标题： Arrays of recessed access devices, methods of forming recessed access gate constructions, and methods of forming isolation gate constructions in the fabrication of recessed access devices
- 专利标题（中）： 嵌入式接入装置的阵列，形成凹入的接入门结构的方法以及在凹陷接入装置的制造中形成隔离栅极结构的方法
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申请号： US13217963申请日： 2011-08-25
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公开(公告)号： US09385132B2公开(公告)日： 2016-07-05
- 发明人: Lars P. Heineck , Troy R. Sorensen
- 申请人： Lars P. Heineck , Troy R. Sorensen
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 主分类号： H01L21/283
- IPC分类号： H01L21/283 ; H01L27/108 ; H01L21/28 ; H01L29/66 ; H01L21/308
摘要：
A method of forming an array of recessed access device gate constructions includes using the width of an anisotropically etched sidewall spacer in forming mask openings in an etch mask for forming all recessed access device trenches within semiconductor material within all of the array. The etch mask is used while etching all of the recessed access device trenches into the semiconductor material within all of the array through the mask openings. Individual recessed access gate constructions are formed in the individual recessed access device trenches. Other methods are contemplated, including arrays of recessed access devices independent of method of manufacture.
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