发明授权
- 专利标题: Semiconductor device and method
- 专利标题(中): 半导体器件及方法
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申请号: US14463288申请日: 2014-08-19
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公开(公告)号: US09385110B2公开(公告)日: 2016-07-05
- 发明人: Chao-Yang Yeh , Ming-Tsun Lin , Hau Tao
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L25/16 ; H01L25/00 ; H01L21/768 ; H01L25/065 ; H01L23/538 ; H01L23/31
摘要:
A link device with a large density routing is attached to a package in order to provide a high-density interconnect pathway to interconnect semiconductor devices. In an embodiment the package is an integrated fan out package. The link device may be bonded on either side of the package, and the package may optionally comprise through package vias. The link device may also be an integrated passive device that includes resistors, inductor, and capacitor components.
公开/授权文献
- US20150371951A1 Semiconductor Device and Method 公开/授权日:2015-12-24
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