发明授权
- 专利标题： Bi-layer hard mask for robust metallization profile
- 专利标题（中）： 双层硬掩模，用于坚固的金属化轮廓
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申请号： US14102090申请日： 2013-12-10
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公开(公告)号： US09385086B2公开(公告)日： 2016-07-05
- 发明人: Shing-Chyang Pan , Ching-Hua Hsieh , Hong-Hui Hsu
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Eschweiler & Associates, LLC
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/4763 ; H01L23/532 ; H01L21/768 ; H01L23/522
摘要：
A robust metallization profile is formed by forming two or more layers of hard mask with different density. Multi-layer metal hard mask is helpful especially in small feature size process, for example, 50 nm and below. Lower layers have higher density. In such ways, enough process window is offered by lower layers and at the same time, round hard mask profile is offered by upper layers.
公开/授权文献
- US20150162282A1 BI-LAYER HARD MASK FOR ROBUST METALLIZATION PROFILE 公开/授权日：2015-06-11
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