发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13079431申请日： 2011-04-04
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公开(公告)号： US09385042B2公开(公告)日： 2016-07-05
- 发明人: Tadahiro Ohmi , Hiroaki Tanaka
- 申请人： Tadahiro Ohmi , Hiroaki Tanaka
- 申请人地址： JP Sendai-Shi, Miyagi-Ken
- 专利权人： NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
- 当前专利权人： NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
- 当前专利权人地址： JP Sendai-Shi, Miyagi-Ken
- 代理机构： Buchanan Ingersoll & Rooney PC
- 优先权： JP2011-014366 20110126
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8238 ; H01L21/8234 ; H01L21/84 ; H01L27/12
摘要：
This invention provides a technique advantageous to improve the operating speed of an integrated circuit. In a semiconductor device in which an n-type transistor and a p-type transistor are formed on the (551) plane of silicon, the thickness of a silicide layer which is in contact with a diffusion region of the n-type transistor is smaller than that of a silicide layer which is in contact with a diffusion region of the p-type transistor.
公开/授权文献
- US20120187499A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-07-26
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