- 专利标题： Method for providing a self-aligned pad protection in a semiconductor device
-
申请号： US14830766申请日： 2015-08-20
-
公开(公告)号： US09385031B2公开(公告)日： 2016-07-05
- 发明人: Michael Rogalli , Wolfgang Lehnert
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/311 ; H01L21/02 ; H01L21/3213 ; H01L21/027 ; H01L21/3105
摘要：
According to one embodiment, a method for processing a semiconductor device is provided including forming a final metal layer forming a passivation layer over the final metal layer and structuring the passivation layer and the final metal layer to form a patterned metal layer and a patterned passivation layer, wherein the patterned metal layer includes a pad region covered by the patterned passivation layer.
公开/授权文献
信息查询
IPC分类:
