发明授权
- 专利标题： Oxide etching method
- 专利标题（中）： 氧化物蚀刻法
-
申请号： US14550778申请日： 2014-11-21
-
公开(公告)号： US09384993B2公开(公告)日： 2016-07-05
- 发明人: Tomoki Suemasa
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2012-117990 20120523
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/762 ; H01L21/311 ; H01L21/67
摘要：
An oxide etching method includes loading an object to be processed, on a surface of which a patterned silicon oxide film is formed, in a chamber, supplying HF gas and NH3 gas as reactant gases and a diluent gas to the chamber to conduct a reaction treatment in which the HF gas and the NH3 gas are reacted with the silicon oxide film. Thereafter, a heating process is performed to remove a reaction product generated by the reaction treatment. In the reaction treatment, a pressure in the chamber is increased to a predetermined value by increasing a flow rate of the diluent gas so that no etching residue remains and an etching shape has high verticality after the heating process.
公开/授权文献
- US20150079801A1 OXIDE ETCHING METHOD 公开/授权日：2015-03-19
信息查询
IPC分类:
