- 专利标题： Metal oxide protective layer for a semiconductor device
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申请号： US14571126申请日： 2014-12-15
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公开(公告)号： US09384987B2公开(公告)日： 2016-07-05
- 发明人: Sung-Hoon Jung
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL Almere
- 专利权人： ASM IP Holding B.V.
- 当前专利权人： ASM IP Holding B.V.
- 当前专利权人地址： NL Almere
- 代理机构： Snell & Wilmer LLP
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/28 ; H01L29/51 ; H01L21/02 ; C23C16/40 ; C23C16/455
摘要：
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.
公开/授权文献
- US20150147877A1 METAL OXIDE PROTECTIVE LAYER FOR A SEMICONDUCTOR DEVICE 公开/授权日：2015-05-28
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