Invention Grant
- Patent Title: Semiconductor structure and method of forming the same
- Patent Title (中): 半导体结构及其形成方法
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Application No.: US14017001Application Date: 2013-09-03
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Publication No.: US09384984B2Publication Date: 2016-07-05
- Inventor: Chun-Hsien Lin , Min-Hsien Chen
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L21/8238 ; H01L29/51 ; H01L29/165
Abstract:
A method of forming a semiconductor device is disclosed. A substrate having a dielectric layer thereon is provided. The dielectric layer has a gate trench therein and a gate dielectric layer is formed on a bottom of the gate trench. A work function metal layer and a top barrier layer are sequentially formed in the gate trench. A treatment is performed to the top barrier layer so as to form a silicon-containing top barrier layer. A low-resistivity metal layer is formed in the gate trench.
Public/Granted literature
- US20150061041A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2015-03-05
Information query
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