发明授权
- 专利标题： Depositing material into high aspect ratio structures
- 专利标题（中）： 将材料沉积成高纵横比结构
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申请号： US14758043申请日： 2013-12-30
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公开(公告)号： US09384982B2公开(公告)日： 2016-07-05
- 发明人: Sang Hoon Lee , Jeffrey Blackwood , Stacey Stone
- 申请人： FEI Company
- 申请人地址： US OR Hillsboro
- 专利权人： FEI Company
- 当前专利权人： FEI Company
- 当前专利权人地址： US OR Hillsboro
- 代理机构： Scheinberg & Associates, P.C.
- 代理商 John B. Kelly
- 国际申请： PCT/US2013/078354 WO 20131230
- 国际公布： WO2014/106202 WO 20140703
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/31 ; H01L21/469 ; H01L21/26 ; H01L21/02 ; H01L21/285 ; C23C16/04 ; H01L21/768
摘要：
A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures without voids. A beam having a diameter smaller than the diameter of the hole is directed into the hole to induced deposition beginning in the center region of the hole bottom. After an elongated structure is formed in the hole by the beam-induced deposition, a beam can then be scanned in a pattern at least as large as the hole diameter to fill the remainder of the hole. The high aspect ratio hole can then be cross-sectioned using an ion beam for observation without creating artefacts. When electron-beam-induced deposition is used, the electrons preferably have a high energy to reach the bottom of the hole, and the beam has a low current, to reduce spurious deposition by beam tails.
公开/授权文献
- US20150340235A1 DEPOSITING MATERIAL INTO HIGH ASPECT RATIO STRUCTURES 公开/授权日：2015-11-26
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