发明授权
US09384962B2 Oxygen treatment of replacement work-function metals in CMOS transistor gates
有权
CMOS晶体管栅极中替代工作功能金属的氧化处理
- 专利标题： Oxygen treatment of replacement work-function metals in CMOS transistor gates
- 专利标题（中）： CMOS晶体管栅极中替代工作功能金属的氧化处理
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申请号： US13082387申请日： 2011-04-07
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公开(公告)号： US09384962B2公开(公告)日： 2016-07-05
- 发明人: Guang-Yaw Hwang , Chun-Hsien Lin , Hung-Ling Shih , Jiunn-Hsiung Liao , Zhi-Cheng Lee , Shao-Hua Hsu , Yi-Wen Chen , Cheng-Guo Chen , Jung-Tsung Tseng , Chien-Ting Lin , Tong-Jyun Huang , Jie-Ning Yang , Tsung-Lung Tsai , Po-Jui Liao , Chien-Ming Lai , Ying-Tsung Chen , Cheng-Yu Ma , Wen-Han Hung , Che-Hua Hsu
- 申请人： Guang-Yaw Hwang , Chun-Hsien Lin , Hung-Ling Shih , Jiunn-Hsiung Liao , Zhi-Cheng Lee , Shao-Hua Hsu , Yi-Wen Chen , Cheng-Guo Chen , Jung-Tsung Tseng , Chien-Ting Lin , Tong-Jyun Huang , Jie-Ning Yang , Tsung-Lung Tsai , Po-Jui Liao , Chien-Ming Lai , Ying-Tsung Chen , Cheng-Yu Ma , Wen-Han Hung , Che-Hua Hsu
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/02
摘要：
A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.
公开/授权文献
- US20120256276A1 Metal Gate and Fabricating Method Thereof 公开/授权日：2012-10-11
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