发明授权
- 专利标题： Memories having a built-in self-test (BIST) feature
- 专利标题（中）： 具有内置自检（BIST）功能的记忆体
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申请号： US14102727申请日： 2013-12-11
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公开(公告)号： US09384856B2公开(公告)日： 2016-07-05
- 发明人: Henning F. Spruth , Qadeer A. Qureshi , Reinaldo Silveira
- 申请人： Henning F. Spruth , Qadeer A. Qureshi , Reinaldo Silveira
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： G11C29/00
- IPC分类号： G11C29/00 ; G11C29/38 ; G06F11/263 ; G11C29/42 ; G11C29/44
摘要：
A memory system includes a memory and a built-in self-test (BIST) unit coupled to the memory. The BIST unit is configured to run a test pattern on the memory to accumulate a fault signature, and store fault signature information based on the accumulated fault signature at multiple locations in the memory.
公开/授权文献
- US20150162098A1 MEMORIES HAVING A BUILT-IN SELF-TEST (BIST) FEATURE 公开/授权日：2015-06-11
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