Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14549792Application Date: 2014-11-21
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Publication No.: US09368480B2Publication Date: 2016-06-14
- Inventor: Makoto Murai
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP2013-262348 20131219
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/065 ; H01L25/00 ; H01L23/31 ; H01L21/56 ; H01L23/00

Abstract:
Provided is a semiconductor device, including: a first substrate that includes a first wiring; a second substrate that is disposed facing the first substrate and includes a second wiring, the second wiring being connected to the first wiring through a connection terminal, and the second substrate being smaller in area than the first substrate; a first resin layer that is filled in a gap between the first substrate and the second substrate and covers a region, on the first substrate, in an outer periphery of the second substrate; an organic film pattern that is provided on the first substrate and surrounds the first resin layer; and a second resin layer that covers the first substrate, the organic film pattern, the first resin layer, and the second substrate.
Public/Granted literature
- US20150179614A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-06-25
Information query
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