发明授权
- 专利标题： Light-emitting device and the manufacturing method thereof
- 专利标题（中）： 发光元件及其制造方法
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申请号： US13918374申请日： 2013-06-14
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公开(公告)号： US09362452B2公开(公告)日： 2016-06-07
- 发明人: Shih Pang Chang , Ta Cheng Hsu , Min Hsun Hsieh
- 申请人： EPISTAR CORPORATION
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 主分类号： H01L33/22
- IPC分类号： H01L33/22 ; H01L33/00
摘要：
A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.
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