Invention Grant
- Patent Title: Integrated passive device (IPD) on substrate
- Patent Title (中): 集成无源器件(IPD)在基板上
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Application No.: US13968627Application Date: 2013-08-16
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Publication No.: US09362218B2Publication Date: 2016-06-07
- Inventor: Daeik Daniel Kim , Young Kyu Song , Changhan Hobie Yun , Mario Francisco Velez , Chengjie Zuo , Jonghae Kim , Xiaonan Zhang , Ryan David Lane
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/768 ; H01L49/02 ; H01L23/50 ; H01L23/64 ; H01L23/522

Abstract:
Some novel features pertain to a semiconductor device that includes a substrate, a first cavity that traverses the substrate. The first cavity is configured to be occupied by a interconnect material (e.g., solder ball). The substrate also includes a first metal layer coupled to a first side wall of the first cavity. The substrate further includes a first integrated passive device (IPD) on a first surface of the substrate, the first IPD coupled to the first metal layer. In some implementations, the substrate is a glass substrate. In some implementations, the first IPD is one of at least a capacitor, an inductor and/or a resistor. In some implementations, the semiconductor device further includes a second integrated passive device (IPD) on a second surface of the substrate. The second IPD is coupled to the first metal layer.
Public/Granted literature
- US20150048480A1 INTEGRATED PASSIVE DEVICE (IPD) ON SUBTRATE Public/Granted day:2015-02-19
Information query
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