Invention Grant
- Patent Title: Staged via formation from both sides of chip
- Patent Title (中): 通过芯片两侧分层成型
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Application No.: US14499162Application Date: 2014-09-27
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Publication No.: US09362203B2Publication Date: 2016-06-07
- Inventor: Vage Oganesian , Belgacem Haba , Ilyas Mohammed , Craig Mitchell , Piyush Savalia
- Applicant: Tessera, Inc.
- Applicant Address: US CA San Jose
- Assignee: Tessera, Inc.
- Current Assignee: Tessera, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L25/065 ; H01L25/00 ; H01L23/00 ; H01L23/50

Abstract:
A method of fabricating a semiconductor assembly can include providing a semiconductor element having a front surface, a rear surface, and a plurality of conductive pads, forming at least one hole extending at least through a respective one of the conductive pads by processing applied to the respective conductive pad from above the front surface, forming an opening extending from the rear surface at least partially through a thickness of the semiconductor element, such that the at least one hole and the opening meet at a location between the front and rear surfaces, and forming at least one conductive element exposed at the rear surface for electrical connection to an external device, the at least one conductive element extending within the at least one hole and at least into the opening, the conductive element being electrically connected with the respective conductive pad.
Public/Granted literature
- US20150130077A1 STAGED VIA FORMATION FROM BOTH SIDES OF CHIP Public/Granted day:2015-05-14
Information query
IPC分类: