Invention Grant
- Patent Title: Substrate treatment method
- Patent Title (中): 底物处理方法
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Application No.: US13425918Application Date: 2012-03-21
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Publication No.: US09362147B2Publication Date: 2016-06-07
- Inventor: Takashi Izuta , Hiroaki Ishii , Asuka Yoshizumi
- Applicant: Takashi Izuta , Hiroaki Ishii , Asuka Yoshizumi
- Applicant Address: JP
- Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee Address: JP
- Agency: Ostrolenk Faber LLP
- Priority: JP2008-278568 20081029; JP2009-082614 20090330
- Main IPC: F26B3/02
- IPC: F26B3/02 ; F26B25/14 ; H01L21/67
Abstract:
A substrate treatment method employs a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.
Public/Granted literature
- US20120174429A1 SUBSTRATE TREATMENT METHOD Public/Granted day:2012-07-12
Information query
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