Invention Grant
- Patent Title: BSI image sensor chips and methods for forming the same
- Patent Title (中): BSI图像传感器芯片及其形成方法
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Application No.: US13352980Application Date: 2012-01-18
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Publication No.: US09356059B2Publication Date: 2016-05-31
- Inventor: Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
- Applicant: Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L27/146
Abstract:
A device includes semiconductor substrate having a front side and a backside. A polysilicon layer is disposed on the backside of the semiconductor substrate. The polysilicon layer includes a portion doped with a p-type impurity. A dielectric layer is disposed on the backside of the semiconductor substrate, wherein the polysilicon layer is between the semiconductor substrate and the polysilicon layer.
Public/Granted literature
- US20130153901A1 BSI Image Sensor Chips and Methods for Forming the Same Public/Granted day:2013-06-20
Information query
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