Invention Grant
- Patent Title: Selectively modified nanoporous structure and production methods thereof
- Patent Title (中): 选择性改性的纳米孔结构及其制备方法
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Application No.: US14024092Application Date: 2013-09-11
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Publication No.: US09352285B2Publication Date: 2016-05-31
- Inventor: You Hwan Son , Jae Eun Kim , Bo Kyung Jung , Hyo Rang Kang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0131713 20121120
- Main IPC: B01D67/00
- IPC: B01D67/00 ; B01D71/02

Abstract:
A method of selectively modifying a structure including preparing a structure including a nano-sized through-pore, filling the nano-sized through-pore with a surfactant, removing a portion of the surfactant from both ends of the nano-sized through-pore to expose a portion of an internal surface of the nano-sized through-pore, modifying the exposed internal surface of the nano-sized through-pore with a first compound, removing the surfactant from the nano-sized through-pore having the internal surface modified with the first compound to expose an internal surface that remains unmodified with the first compound, and modifying with a second compound the exposed internal surface without being modified with the first compound, the second compound being different from the first compound.
Public/Granted literature
- US20140141231A1 SELECTIVELY MODIFIED NANOPOROUS STRUCTURE AND PRODUCTION METHODS THEREOF Public/Granted day:2014-05-22
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