Invention Grant
- Patent Title: Method and apparatus for planarization of substrate coatings
- Patent Title (中): 用于平面化基底涂层的方法和装置
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Application No.: US13800627Application Date: 2013-03-13
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Publication No.: US09349622B2Publication Date: 2016-05-24
- Inventor: Wen-Yun Wang , Cheng-Han Wu , Yu-Chung Su , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: B05D3/12
- IPC: B05D3/12 ; H01L21/67 ; H01L21/027 ; G03F7/16 ; H01L21/3105 ; B05D1/00 ; H01L21/02

Abstract:
A method of forming a coating, comprises applying a first coating to a substrate having a plurality of topographical features, planarizing a top surface of the first coating, and drying the first coating after planarizing the top surface. The first coating may be applied over the plurality of topographical features, and may be substantially liquid during application. The first coating may optionally be a conformal coating over topographical features of the substrate. The conformal coating may be dried prior to planarizing the top surface of the first coating. A solvent may be applied to the conformal coating, with the top surface of the conformal coating being substantially planar after application of the solvent. The first coating may have a planar surface prior to drying the first coating, and the first coating may be dried without substantial spin-drying by modifying an environment of the first coating.
Public/Granted literature
- US20140273509A1 Method and Apparatus for Planarization of Substrate Coatings Public/Granted day:2014-09-18
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