Invention Grant
- Patent Title: GaN-based light emitting diode with current spreading structure
- Patent Title (中): 具有电流扩展结构的GaN基发光二极管
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Application No.: US14641383Application Date: 2015-03-07
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Publication No.: US09337406B2Publication Date: 2016-05-10
- Inventor: Lingfeng Yin , Suhui Lin , Jiansen Zheng , Chuangui Liu , Yide Ou , Gong Chen
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201210395722 20121018
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L33/62 ; H01L33/38 ; H01L33/42 ; H01L33/00 ; H01L33/08 ; H01L33/32
Abstract:
A GaN-based LED with a current spreading structure, the LED including a substrate, a light-emitting epitaxial layer over the substrate, and a current spreading structure over the light-emitting epitaxial layer. The current spreading structure includes a transparent electrode spreading bar, and a metal electrode spreading bar attached to the side wall of the transparent electrode spreading bar. The current spreading structure can improve the current spreading effect, reducing or eliminating of electrode shading, improving luminous efficiency of the LED, and avoid or reduce high voltage (Vf).
Public/Granted literature
- US20150188015A1 GaN-based Light Emitting Diode with Current Spreading Structure Public/Granted day:2015-07-02
Information query
IPC分类:
