Invention Grant
- Patent Title: Light-emitting diode and fabrication method thereof
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US14643394Application Date: 2015-03-10
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Publication No.: US09337384B2Publication Date: 2016-05-10
- Inventor: Lingfeng Yin , Suhui Lin , Jiansen Zheng , Chuangui Liu , Yide Ou , Qing Wang
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201210443395 20121108
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/14 ; H01L33/40 ; H01L33/08 ; H01L33/32
Abstract:
A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.
Public/Granted literature
- US20150187990A1 Light-Emitting Diode and Fabrication Method Thereof Public/Granted day:2015-07-02
Information query
IPC分类:
