发明授权
- 专利标题： Light-emitting diode and fabrication method thereof
- 专利标题（中）： 发光二极管及其制造方法
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申请号： US14643394申请日： 2015-03-10
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公开(公告)号： US09337384B2公开(公告)日： 2016-05-10
- 发明人: Lingfeng Yin , Suhui Lin , Jiansen Zheng , Chuangui Liu , Yide Ou , Qing Wang
- 申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址： CN Xiamen
- 专利权人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址： CN Xiamen
- 代理机构： Syncoda LLC
- 代理商 Feng Ma; Junjie Feng
- 优先权： CN201210443395 20121108
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/14 ; H01L33/40 ; H01L33/08 ; H01L33/32
摘要：
A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.
公开/授权文献
- US20150187990A1 Light-Emitting Diode and Fabrication Method Thereof 公开/授权日：2015-07-02
信息查询
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