Invention Grant
- Patent Title: Nonvolatile memory device and related data management method
- Patent Title (中): 非易失性存储器件及相关数据管理方法
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Application No.: US13935593Application Date: 2013-07-05
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Publication No.: US09335955B2Publication Date: 2016-05-10
- Inventor: Kwanghoon Kim , Junjin Kong , Hong Rak Son
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0080206 20120723
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/10

Abstract:
A method of operating a nonvolatile memory device comprising a plurality of memory blocks comprises storing first data and second data to be stored in a hot memory block of the memory blocks in a first buffer, transferring the first data stored in the first buffer to a second buffer to program the first data in the hot memory block, and generating RAID parity data based on the first and second data, wherein the RAID parity data and the first data form part of the same write stripe.
Public/Granted literature
- US20140025887A1 NONVOLATILE MEMORY DEVICE AND RELATED DATA MANAGEMENT METHOD Public/Granted day:2014-01-23
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