发明授权
- 专利标题： Memristive element and electronic memory based on such elements
- 专利标题（中）： 基于这些元素的忆阻元件和电子存储器
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申请号： US13994936申请日： 2011-12-14
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公开(公告)号： US09331274B2公开(公告)日： 2016-05-03
- 发明人: Alexandre Moradpour , Olivier Schneegans , Alexandre Revcolevschi , Sylvain Franger , Raphaël Salot
- 申请人： Alexandre Moradpour , Olivier Schneegans , Alexandre Revcolevschi , Sylvain Franger , Raphaël Salot
- 申请人地址： FR Paris FR Paris FR Orsay
- 专利权人： Centre National de la Recherche Scientifique,Commissariat a L'Energie Atomique et aux Energies Alternatives,Universite Paris—SUD 11
- 当前专利权人： Centre National de la Recherche Scientifique,Commissariat a L'Energie Atomique et aux Energies Alternatives,Universite Paris—SUD 11
- 当前专利权人地址： FR Paris FR Paris FR Orsay
- 代理机构： Alston & Bird LLP
- 优先权： FR1004931 20101217
- 国际申请： PCT/IB2011/055672 WO 20111214
- 国际公布： WO2012/080967 WO 20120621
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
The invention relates to a memristive element (M) formed by: a first electrode (10); a second electrode (30); and an active region (20) making direct electrical contact with said first and second electrodes, characterized in that said active region essentially consists of a thin film of an insertion compound containing at least one alkali metal, said compound being an oxide or chalcogenide of at least one transition metal and being able to conduct both electrons and ions. Non-volatile electronic memory formed from a plurality of such memristive elements.
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