Invention Grant
US09330911B2 Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride
有权
具有掺杂有过渡金属或包含过渡金属氮化物的III族氮化物电流扩散层的发光器件
- Patent Title: Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride
- Patent Title (中): 具有掺杂有过渡金属或包含过渡金属氮化物的III族氮化物电流扩散层的发光器件
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Application No.: US13215122Application Date: 2011-08-22
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Publication No.: US09330911B2Publication Date: 2016-05-03
- Inventor: Jianping Zhang , Chunhui Yan
- Applicant: Jianping Zhang , Chunhui Yan
- Applicant Address: HK Central
- Assignee: INVENLUX LIMITED
- Current Assignee: INVENLUX LIMITED
- Current Assignee Address: HK Central
- Agency: J.C. Patents
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L21/02 ; H01L33/14 ; H01L33/10 ; H01L33/32
Abstract:
A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well doped with transition metal. Also provided is a method of forming transition-metal containing AlInGaN electrical conductive material.
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