发明授权
- 专利标题： Field emission device and method of fabricating the same
- 专利标题（中）： 场发射装置及其制造方法
-
申请号： US13743382申请日： 2013-01-17
-
公开(公告)号： US09306167B2公开(公告)日： 2016-04-05
- 发明人: Rafael Kalish , Moshe Tordjman
- 申请人： Technion Research & Development Foundation Ltd.
- 申请人地址： IL Haifa
- 专利权人： Technion Research & Development Foundation Limited
- 当前专利权人： Technion Research & Development Foundation Limited
- 当前专利权人地址： IL Haifa
- 主分类号： B82Y30/00
- IPC分类号： B82Y30/00 ; H01L49/00 ; H01J1/304 ; B82Y99/00 ; B82Y10/00
摘要：
A field-emission device is disclosed. The device comprises a solid state structure formed of a crystalline material and an amorphous material, wherein an outer surface of the solid state structure is substantially devoid of the amorphous material, and wherein a p-type conductivity of the crystalline material is higher at or near the outer surface than far from the outer surface.
公开/授权文献
- US20130187123A1 FIELD EMISSION DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日：2013-07-25
信息查询
