发明授权
- 专利标题: Light emitting device and method for manufacturing the same
- 专利标题(中): 发光元件及其制造方法
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申请号: US14858241申请日: 2015-09-18
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公开(公告)号: US09306132B2公开(公告)日: 2016-04-05
- 发明人: Keiichi Maki
- 申请人: Toshiba Hokuto Electronics Corporation
- 申请人地址: JP Asahikawa-Shi
- 专利权人: Toshiba Hokuto Electronics Corporation
- 当前专利权人: Toshiba Hokuto Electronics Corporation
- 当前专利权人地址: JP Asahikawa-Shi
- 代理机构: Burr & Brown, PLLC
- 优先权: JP2013-068172 20130328; JP2013-068173 20130328
- 主分类号: H01L29/18
- IPC分类号: H01L29/18 ; H01L33/00 ; H01L33/54 ; H01L27/15 ; H01L33/62 ; H01L25/075 ; H01L23/00 ; H01L33/56
摘要:
A light emitting device in an embodiment includes first and second light transmissive insulators and a light emitting diode arranged between them. First and second electrodes of the light emitting diode are electrically connected to a conductive circuit layer provided on a surface of at least one of the first and second light transmissive insulators. Between the first light transmissive insulator and the second light transmissive insulator, a third light transmissive insulator is embedded which has at least one of a Vicat softening temperature of 80° C. or higher and 160° C. or lower and a tensile storage elastic modulus of 0.01 GPa or more and 10 GPa or less.
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