发明授权
- 专利标题： Curing photo resist for improving etching selectivity
- 专利标题（中）： 固化光刻胶用于提高蚀刻选择性
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申请号： US14134526申请日： 2013-12-19
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公开(公告)号： US09305839B2公开(公告)日： 2016-04-05
- 发明人: Wen-Kuo Hsieh , Tsung-Hung Chu , Ming-Chung Liang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; G03F7/40 ; H01L21/027 ; H01L21/311
摘要：
A method includes exposing and developing a negative photo resist, and performing a treatment on the negative photo resist using an electron beam. After the treatment, a layer underlying the photo resist is etched using the negative photo resist as an etching mask.
公开/授权文献
- US20150179511A1 Curing Photo Resist for Improving Etching Selectivity 公开/授权日：2015-06-25
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