Invention Grant
US09299472B2 Copper-alloy barrier layers for metallization in thin-film transistors and flat panel displays
有权
用于薄膜晶体管和平板显示器中金属化的铜合金阻挡层
- Patent Title: Copper-alloy barrier layers for metallization in thin-film transistors and flat panel displays
- Patent Title (中): 用于薄膜晶体管和平板显示器中金属化的铜合金阻挡层
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Application No.: US14296796Application Date: 2014-06-05
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Publication No.: US09299472B2Publication Date: 2016-03-29
- Inventor: Shuwei Sun , Francois-Charles Dary , Marc Abouaf , Patrick Hogan , Qi Zhang
- Applicant: Shuwei Sun , Francois-Charles Dary , Marc Abouaf , Patrick Hogan , Qi Zhang
- Applicant Address: US MA Newton
- Assignee: H.C. Starck Inc.
- Current Assignee: H.C. Starck Inc.
- Current Assignee Address: US MA Newton
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01B1/02 ; H01L29/66 ; G06F3/041 ; H01L29/49
Abstract:
In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor layer, a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.
Public/Granted literature
- US20140363933A1 COPPER-ALLOY BARRIER LAYERS FOR METALLIZATION IN THIN-FILM TRANSISTORS AND FLAT PANEL DISPLAYS Public/Granted day:2014-12-11
Information query
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