发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US13654572申请日: 2012-10-18
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公开(公告)号: US09293300B2公开(公告)日: 2016-03-22
- 发明人: Hiroyuki Kobayashi , Hideyuki Nagaishi , Takumi Tandou , Naoshi Itabashi
- 申请人: Hitachi, Ltd.
- 申请人地址: JP Tokyo
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Baker Botts L.L.P.
- 优先权: JP2011-230222 20111020
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; C23F1/00 ; H01J37/32 ; B08B7/00
摘要:
There is provided a plasma processing apparatus that can generate uniform plasma without increasing costs per unit electric power even though the discharge area is increased to adapt to samples in given sizes by arranging a plurality of plasma discharge units. A plasma processing apparatus includes an RF power supply having an RF signal circuit and an RF power circuit, a case, and a discharge electrode. A plasma module is configured of the discharge electrode and the RF power circuit provided in the case. A frequency signal from the RF signal circuit is inputted to a plurality of the plasma modules connected in parallel with each other.
公开/授权文献
- US20130098556A1 PLASMA PROCESSING APPARATUS 公开/授权日:2013-04-25
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