发明授权
- 专利标题: Semiconductor mismatch reduction
- 专利标题(中): 半导体失配减少
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申请号: US13048411申请日: 2011-03-15
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公开(公告)号: US09287252B2公开(公告)日: 2016-03-15
- 发明人: Chung-Hui Chen , Ruey-Bin Sheen , Yung-Chow Peng , Po-Zeng Kang , Chung-Peng Hsieh
- 申请人: Chung-Hui Chen , Ruey-Bin Sheen , Yung-Chow Peng , Po-Zeng Kang , Chung-Peng Hsieh
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L29/12
- IPC分类号: H01L29/12 ; H01L27/02
摘要:
A system and method for reducing density mismatch is disclosed. An embodiment comprises determining a conductor density and an active area density in a high density area and a low density area of a semiconductor device. Dummy material may be added to the low density area in order to raise the conductor density and the active area density, thereby reducing the internal density mismatches between the high density area and the low density area. Additionally, a similar process may be used to reduce external mismatches between different regions on the semiconductor substrate. Once these mismatches have been reduced, empty regions surrounding the different regions may additionally be filled in order to reduce the conductor density mismatch and the active area density mismatches.
公开/授权文献
- US20120235208A1 Semiconductor Mismatch Reduction 公开/授权日:2012-09-20
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